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Local impact of Stone–Wales defect on a single layer GNRFET

Shamloo, H ; Sharif University of Technology | 2020

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  1. Type of Document: Article
  2. DOI: 10.1016/j.physleta.2019.126170
  3. Publisher: Elsevier B.V , 2020
  4. Abstract:
  5. In this work, a new structure of single layer armchair graphene nanoribbon field effect transistor with the Stone–Wales (SW) defect (SWGNRFET) is studied. The simulations are solved with Poisson–Schrödinger equation self-consistently by using Non-Equilibrium Green Function (NEGF) and in the real space approach. The energy band structure is obtained by approximation tight-binding method. The results show that displacement of a defect in the width of the channel of the new structure is led to 50% increase in ION/IOFF ratio only by rotating of a C–C (Carbon–Carbon) bond with similar behavior. But, a remarkable increase of 300% in ION/IOFF ratio is obtained by a “dual center” defect. The results show that structure with defects in the middle of the channel, has the best performance of SWGNRFET. On the other hand, ION/IOFF ratio decreases when the defect moves from middle to the “near the drain” and “source”. © 2019 Elsevier B.V
  6. Keywords:
  7. Non-Equilibrium Green's function (NEGF) ; Real space approach ; Single layer graphene nanoribbon field effect transistor ; Stone–Wales defect (SW) ; Tight-Binding (TB) ; Band structure ; Binding energy ; Defects ; Graphene ; Graphene nanoribbon ; Graphene transistors ; Ions ; Nanoribbons ; Poisson equation ; Armchair ; Non-equilibrium Green's function ; Real-space ; Single layer ; Tight binding ; Field effect transistors
  8. Source: Physics Letters, Section A: General, Atomic and Solid State Physics ; Volume 384, Issue 7 , 2020
  9. URL: https://www.sciencedirect.com/science/article/pii/S0375960119311041