Loading...

Threshold characteristics analysis of InP-based PhC VCSEL with buried tunnel junction

Marjani, S ; Sharif University of Technology | 2013

659 Viewed
  1. Type of Document: Article
  2. DOI: 10.1109/IranianCEE.2013.6599783
  3. Publisher: 2013
  4. Abstract:
  5. The comprehensive optical-electrical-gain-thermal self-consistent model of the 1.55 μm AlGaInAs Photonic Crystal vertical cavity surface emitting diode lasers (PhC VCSELs) with buried tunnel junction (BTJ) has been applied to optimize its threshold characteristics. It shows that, for 5 μm devices, the room temperature (RT) threshold current equal to only 0.59 mA and maximum operating temperature equal to as much as 380 K. Results suggest that, the 5 μm AlGaInAs PhC VCSELs seem to be the most optimal ones for light sources in high performance optical communication systems
  6. Keywords:
  7. AlGaInAs ; Buried tunnel junction ; Operating temperature ; Room temperature ; Self consistent modeling ; Threshold characteristics ; Threshold currents ; Vertical cavity surface emitting ; Electrical engineering ; Light sources ; Optimization ; Surface emitting lasers ; Tunnel junctions ; Laser optics
  8. Source: 2013 21st Iranian Conference on Electrical Engineering ; May , 2013 , Page(s): 1 - 4 ; 9781467356343 (ISBN)
  9. URL: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6599783