Loading...

A model reduction based approach for extracting the diffusion and generation terms of pn junction leakage current

Khalili Amiri, P ; Sharif University of Technology | 2003

185 Viewed
  1. Type of Document: Article
  2. DOI: 10.1088/0268-1242/18/4/307
  3. Publisher: 2003
  4. Abstract:
  5. Using a model reduction method, a formula for the ideality factor of a pn junction as a function of the diffusion and generation terms of its reverse current is derived. Using this formula a method for separate computation of these two currents for a pn junction is presented. The validity of the method is investigated using computer simulations for an assumed diode with known ideality factor and total leakage current. Experimental results for two commercially available diodes validate the proposed technique
  6. Keywords:
  7. Diffusion in solids ; Semiconductor junctions ; Mathematical models ; Leakage currents ; Diodes
  8. Source: Semiconductor Science and Technology ; Volume 18, Issue 4 , 2003 , Pages 234-240 ; 02681242 (ISSN)
  9. URL: https://iopscience.iop.org/article/10.1088/0268-1242/18/4/307