Sharif Digital Repository

In this paper, we analyze the tradeoff between the profits gained by mobile virtual network operators (MVNOs) in an orthogonal frequency division multiple access (OFDMA)-based virtualized wireless network (VWN). In this respect, MVNOs rent the network resources from a mobile network operator (MNO) to create virtual resources based on allocated rates and the cost due to allocated transmit powers in two different strategies: resource-based isolation strategy and rate-based isolation strategy. In resource-based isolation strategy, it is assumed that the whole bandwidth in each base station is divided equally between MVNOs whereas in rate-based isolation strategy, the whole bandwidth in each... 

Al-Si3N4 couples were heat-treated at 850-1150°C for 250 hours. The thickness of the interacted area was measured by scanning electron microscopy (SEM) and scanning/transmission electron microscopy (TEM/STEM). The interaction rate increases exponentially with inverse temperature, with an activation energy of 194.23 kJ/mol and diffusion pre-coefficient of 5 × 10−9 m2/s, indicating that the interaction is diffusion-dependent. As the results showed, the interfacial area is comprised of Al alloy channels, Si precipitates, and AlN grains. Al-Si transfer through the solid solution (Si3-xAlxN4-y) at the interface of Al alloy and β-Si3N4 grains controls the kinetic of the interaction. When... 

Electrochemical sensing performance of two-dimensional hexagonal boron nitride (2D h-BN) has traditionally been suppressed by their intrinsic electrical insulation and deficient electron transportation mechanism. However, the excellent electrocatalytic activity, high specific surface area, N- and B-active edges, structural defects, adjustable band gap through interaction with other nanomaterials, and chemical functionalization, makes 2D h-BN ideal for many sensing applications. Therefore, finding a pathway to modulate the electronic properties of 2D h-BN while the intrinsic characteristics are well preserved, will evolve a new generation of highly sensitive and selective electrochemical... 

The development of polymer-based composites with thermal transport capability has now become essential in response to the efficient thermal management required in electronic and energy conversion devices. In this work, a novel hybrid filler consisting of graphene nanoplatelet (GNP) and boron nitride microparticles (micro-BN) is used to improve the thermal conductivity of epoxy composite. The GNPs with an average lateral size of 8 µm and an average thickness of 5 nm are in the same volume range with the 1 µm size micro-BN particles. According to the results, the thermal conductivity of the composites changes abruptly with increasing micro-BN loading at fixed GNP loading, which is attributed... 

This article applies a systematic approach based on the normalized determinant function (NDF) theory to analyse stability in multi-loop circuits and to design the required stabilization network. Presenting several provisions, the return ratios are extracted by employing immittance or hybrid matrices (Z, Y, G or H) of active two ports. Using these matrices, instead of the S-parameters, facilitates the selection of an appropriate stabilizer network. As a practical case, a non-uniform distributed amplifier (NDA) is designed and inspected for potential instabilities. The presented procedure detects instability associated with one of the NDA circuit's loops, and an appropriate stabilization... 

In this paper, a novel structure is presented in order to decrease the polarization charges of quantum wells. The main purpose of this design is to make electron and hole wavefunctions closer to each other and to increase overlap integral following an increase of radiative recombination rates and internal quantum efficiency. Furthermore, carriers will be increased and become more balanced and identical which leads to an increase in efficiency of light-emitting diodes. The improvement of radiative recombination rates is studied in new structures. Energy bands diagram, carriers density, current density–voltage, and power density–current density are used to demonstrate the superior performance... 

In this article, a design methodology is presented to realize integrated class-F high-power amplifiers (HPAs). A harmonic-control network (HCN) is proposed to present short- and open-circuit impedances to each transistor employed in the output stage of the HPA at {2}f {0} and {3}f {0} frequencies. The HCN absorbs the parasitic capacitance of the transistor and lends itself to be absorbed in the matching and power combiner networks, reducing the die area of the HPA. A proof-of-concept 9.7-10.3-GHz class-F HPA was designed and implemented in a 0.25- μ ext{m} GaAs pHEMT technology with V {DD} of 6 V. The designed HPA consists of two amplifying stages, and its output stage includes 16... 

In this paper, a novel structure is presented in order to decrease the polarization charges of quantum wells. The main purpose of this design is to make electron and hole wavefunctions closer to each other and to increase overlap integral following an increase of radiative recombination rates and internal quantum efficiency. Furthermore, carriers will be increased and become more balanced and identical which leads to an increase in efficiency of light-emitting diodes. The improvement of radiative recombination rates is studied in new structures. Energy bands diagram, carriers density, current density–voltage, and power density–current density are used to demonstrate the superior performance... 

In this article, a design methodology is presented to realize integrated class-F high-power amplifiers (HPAs). A harmonic-control network (HCN) is proposed to present short- and open-circuit impedances to each transistor employed in the output stage of the HPA at {2}f {0} and {3}f {0} frequencies. The HCN absorbs the parasitic capacitance of the transistor and lends itself to be absorbed in the matching and power combiner networks, reducing the die area of the HPA. A proof-of-concept 9.7-10.3-GHz class-F HPA was designed and implemented in a 0.25- μ ext{m} GaAs pHEMT technology with V {DD} of 6 V. The designed HPA consists of two amplifying stages, and its output stage includes 16... 

In this brief, a design technique for tapered distributed low-noise amplifiers (LNAs) is presented. A circuit model is developed for gain and noise analysis of a nonuniform distributed amplifier (DA). It is shown that by optimal tapering of gate and drain transmission lines and transistors, the tapered distributed LNA can provide lower broadband average noise figure (NF) compared to a uniform DA. A proof-of-concept integrated circuit is implemented using a 0.1-μm GaAs pHEMT process. The amplifier provides average gain of 15.2 dB and 3-dB bandwidth of 43.3 GHz. The average NF of 2.3 dB and minimum NF of 2.0 dB are achieved over 2-40 GHz. The chip consumes 55 mA current from a 2-V supply. ©... 

Two-dimensional boron nitride quantum dots (2D BNQDs) with excellent chemical stability, high photoluminescence efficiency, and low toxicity are a new class of advanced materials for biosensing and bioimaging applications. To overcome the current challenge about the lack of facile, scalable, and reproducible synthesis approach of BNQDs, we introduce a green and facile approach based on mechanochemical exfoliation of bulk h-BN particles in ethanol. Few-layered hydroxylated-functionalized QDs with a thickness of 1-2 nm and a lateral dimension of 2-6 nm have been prepared. The synthesized nanocrystals exhibit a strong fluorescence emission at 407 and 425 nm with a quantum efficiency of ∼6.2%.... 

Recent investigations on multifunctional piezoelectric semiconductors have shown their excellent potential as photovoltaic components in high-efficiency third-generation quantum nanostructure (QNS) solar cells. The current work is devoted to studying the electro-elastic behavior of high-density QNS photovoltaic semiconductors within which initial mismatch strains of arrays of quantum dots (QDs) or quantum wires (QWRs) induce coupled electro-mechanical fields. The inter-nanostructure couplings which are of great importance in high-density QNS arrays are incorporated in the presented analytical framework. In practice, QNSs with different geometries such as spherical, cuboidal, or pyramidal QDs... 

In the present paper, phase and microstructural characterization of low carbon MgO-C refractories with addition of Fe-catalyzed phenolic resins as binder were investigated. Initially, phenolic resin was modified using various amounts of Fe particles as catalyst originated from iron nitrate ([Fe(NO3)3·9H2O]). The MgO-C matrix compositions were prepared by using 7% of modified phenolic resin, shaped and cured at 200 °C for 24 h. The cured samples were coked in the temperature range from 800 to 1400 °C and then characterized by XRD and FE-SEM techniques. Based on attained results, in-situ graphitic carbons, particularly in carbon nanotubes (CNTs) network were gradually formed from Fe-catalyzed... 

In this paper, two output matching networks (OMNs) are proposed for integrated class-J and class-J-1 mode power amplifiers (PAs). The first MN provides the required load impedances of the class-J mode (i.e., Z(f0) = Ropt + j Ropt and Z(2 f0) = -j (3π/8)Ropt), where as the second MN realizes the optimal impedances of class-J-1 PAs (i.e., Z(f0) = Ropt - j Ropt and Z(2 f0) = j (3π/8)Ropt ). Detailed theoretical analyses are presented for each MN, and the values of matching components (i.e., inductors and capacitors) are obtained in terms of Ropt. Analytical derivations are verified by simulation results, while bandwidth and loss performances of each MN are also characterized. Two... 

An analytical approach for design optimization of multi-stage LNAs with common source topology is developed. This paper reviews and analyses simultaneous noise and input impedance matching in three different topologies including common source amplifier with inductive degeneration, resistive feedback and dual feedback in order to achieve maximum available gain and minimum possible noise figure (NF). A study on multi-stage LNAs is performed to calculate optimum input impedance of each stage for minimum overall NF while considering the gain and NF of that stage in addition to the effect of noise of the following stages. MATLAB was used to calculate the starting point of design optimization in a... 

In the present paper, phase and microstructural characterization of low carbon MgO-C refractories with addition of Fe-catalyzed phenolic resins as binder were investigated. Initially, phenolic resin was modified using various amounts of Fe particles as catalyst originated from iron nitrate ([Fe(NO3)3·9H2O]). The MgO-C matrix compositions were prepared by using 7% of modified phenolic resin, shaped and cured at 200 °C for 24 h. The cured samples were coked in the temperature range from 800 to 1400 °C and then characterized by XRD and FE-SEM techniques. Based on attained results, in-situ graphitic carbons, particularly in carbon nanotubes (CNTs) network were gradually formed from Fe-catalyzed... 

Recently, class-J₂ operation mode has been proposed in the literature for high-efficiency power amplifier (PA) design. It has been shown that the output power (Pout) of a class-J₂ PA can be 1.5 dB higher than Pout of a class-J counterpart, whereas the theoretical drain efficiency of the class-J₂ mode can be as high as 83%. This paper is devoted to introduce and characterize the class-J₂₃ mode of operation, which is the generalized form of the class-J₂ mode and provides a new design space to realize highly efficient PSs. In this new PA mode, the third-harmonic voltage is also included in the drain voltage of the transistor to increase the drain efficiency up to 95.4% in theory. Design space... 

Recently, class-J₂ operation mode has been proposed in the literature for high-efficiency power amplifier (PA) design. It has been shown that the output power (Pout) of a class-J₂ PA can be 1.5 dB higher than Pout of a class-J counterpart, whereas the theoretical drain efficiency of the class-J₂ mode can be as high as 83%. This paper is devoted to introduce and characterize the class-J₂₃ mode of operation, which is the generalized form of the class-J₂ mode and provides a new design space to realize highly efficient PSs. In this new PA mode, the third-harmonic voltage is also included in the drain voltage of the transistor to increase the drain efficiency up to 95.4% in theory. Design space... 

In this paper, the performance of the class-J mode power amplifier (PA) is studied when an auxiliary network performs active load modulation on the main transistor. Load modulation is realized by injecting an additional class-C like current with conduction angle of $alpha $ to the drain node of the main transistor. The injected current employs a phase shift of $phi $ with respect to the half-sinusoidal current of the main transistor, and its maximum value is tuned with the size of the transistor used in the auxiliary network. Detailed theoretical formulations are presented for the optimal load impedances of the PA at the fundamental and second-harmonic frequencies. Furthermore, the output... 

In this article, a design methodology is presented to realize integrated class-F high-power amplifiers (HPAs). A harmonic-control network (HCN) is proposed to present short- and open-circuit impedances to each transistor employed in the output stage of the HPA at 2f_0 and 3f_0 frequencies. The HCN absorbs the parasitic capacitance of the transistor and lends itself to be absorbed in the matching and power combiner networks, reducing the die area of the HPA. A proof-of-concept 9.7-10.3-GHz class-F HPA was designed and implemented in a 0.25-μm GaAs pHEMT technology with VDD of 6 V. The designed HPA consists of two amplifying stages, and its output stage includes 16 transistors in parallel to...