Loading...

Electronic features of rippled graphene

Haji Nasiri, S ; Sharif University of Technology | 2012

600 Viewed
  1. Type of Document: Article
  2. DOI: 10.1109/IranianCEE.2012.6292346
  3. Publisher: 2012
  4. Abstract:
  5. Using tight binding theory the effect of topological ripples on the electronic band structure, density of states (DOS), and Fermi velocity of graphene are studied. The results show that by an increase in the ripple height the graphene Fermi velocity decreases and its DOS increases.- Moreover, we show that an increase in the ripple period causes the graphene band gap and DOS to decrease and its Fermi velocity to increase
  6. Keywords:
  7. Density of states ; Fermi velocity ; Density of state ; Electronic band structure ; Fermi velocities ; Graphene band ; Tight binding theory ; Topological ripples ; Band structure ; Electrical engineering ; Topology ; Velocity ; Graphene
  8. Source: ICEE 2012 - 20th Iranian Conference on Electrical Engineering ; 2012 , Pages 170-172 ; 9781467311489 (ISBN)
  9. URL: http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6292346