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New integrated optical memory based on the plasma wave modulator/switch

Khorasani, S ; Sharif University of Technology | 2001

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  1. Type of Document: Article
  2. DOI: 10.1117/12.426809
  3. Publisher: 2001
  4. Abstract:
  5. The feasibility of an integrated optical memory is explored. This memory cell is based on the plasma wave modulator/switch1, which has a horizontal layered structure. A transverse voltage maintains a bias for the structure and can be used for electrical write cycle. The cell content is then read by a propagating guided optical wave across the structure. It is also possible to apply full optical read/write/clear cycles as discussed. The read cycle can be either destructive or nondestructive, depending on the wavelength. A modification of this device may be considered as an opto-transistor, in which an optical signal controls the flow of another optical beam
  6. Keywords:
  7. Integrated Optics ; Optical Memory ; Optical transistor ; Plasma wave modulator
  8. Source: Integrated Optics Devices V, San Jose, CA, 23 January 2001 through 25 January 2001 ; Volume 4277 , 2001 , Pages 311-314 ; 0277786X (ISSN)
  9. URL: https://www.spiedigitallibrary.org/conference-proceedings-of-spie/4277/New-integrated-optical-memory-based-on-the-plasma-wave-modulator/10.1117/12.426809.short