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Role of Pr doping in Gd1113

Kariminezhad, M ; Sharif University of Technology | 2004

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  1. Type of Document: Article
  2. DOI: 10.1002/pssc.200304480
  3. Publisher: 2004
  4. Abstract:
  5. Tetragonal Gd1-xPrxBaSrCu3O 7-δ polycrystalline samples (0 ≤ x ≤ 0.9) have been prepared by the standard solid-state reaction and characterized by XRD. A hump on the ρ(T) curve have been observed at about 80 K for large values of x. The normal state resistivity have been investigated with two and three dimensional variable range hopping (2&3D-VRH) and Coulomb gap (CG). For low concentration of Pr, 2D-VRH is the dominant mechanism, but with the increase of x, 3D-VRH is dominant. The magnetoresistance measurements of the samples have been analysed by the Ambegakor and Halperin (AH) phase slip model. The field dependences of the pinning energy and critical current density have been studied for different amounts of Pr-doping. © 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
  6. Keywords:
  7. Current density ; X ray diffraction analysis ; Praseodymium ; Polycrystalline materials ; Magnetoresistance ; Gadolinium compounds ; Doping (additives)
  8. Source: Physica Status Solidi C: Conferences ; Volume 1, Issue 7 , 2004 , Pages 1855-1858 ; 16101634 (ISSN)
  9. URL: https://onlinelibrary.wiley.com/doi/abs/10.1002/pssc.200304480