Sharif Digital Repository

By making aligned and suspended copper nanowires, a high performance, transferable, and flexible transparent electrode is reported. Indium tin oxide is often used in devices such as displays, solar cells, and touchscreens that require transparent and conductive plates. Because of problems such as brittleness, high cost, and environmental effects, this material is facing rivals, the most serious of which are metallic nanowire meshes, especially copper. We developed a simple technique which uses a U-shaped collector in the electrospinning process with three advantages including the enhancement of the figure of merit (which is related to the surface resistance Rs and the transmittance T) by... 

The Co-Ni alloy nanowires were electrodeposited into porous anodic aluminum oxide (AAO) templates. At the first, highly ordered AAO templates were synthesized by two-step anodizing of aluminum to increase pore ordering. Arrays of nanowires with diameter about 30 nm and length about 5000 nm were electrodeposited by alternating current. The composition and structure property of nanowires were investigated by EDX, SEM and TEM techniques. It was found that nanowire composition was related to ions concentration in solution and it was shown that at the optimum potential range of electrodeposition (17-19 V), a change at the potential was shown no strong effect on chemical composition of nanowires.... 

In this study, we present fabrication and characterization of a gas ionization sensor based on high aspect ratio one-dimensional CuO nanowires as the field enhancing medium. Self-organized arrays of CuO nanowires have been synthesized based on a low-cost thermal oxidation method and integrated into a gas ionization sensor (GIS). The self-organized arrays of CuO nanowires have been employed to detect the identity of several gas species such as He, Ar and CO at ambient temperature and pressure. The sharp nanoscale size of CuO tips provide very high electric fields at moderate voltages (less than 100 V) and provoke the breakdown of different gases. The reduced breakdown current of the metal... 

The elastic behaviors of a two-axes dipole of wedge disclinations and an individual wedge disclination located inside the shell of a free standing core-shell nanowire is studied within the surface/interface elasticity theory. The corresponding boundary value problem is solved using complex potential functions, defined through modeling the disclination dipole by two finite walls of infinitesimal edge dislocations. The stress field, disclination strain energies and image forces acting on the disclinations, are calculated and studied in detail. It is shown that the stresses are rather inhomogeneous across the nanowire cross section, change their signs and reach local maxima and minima far from... 

The band gap offset is an effect of coordination numbers (CNs) of atom reduction at the edge of transversal cross-section of Silicon nanowires (SiNWs). In this paper, a hierarchical multi-scale technique is developed to model the edge effect on the band gap shift of SiNWs since the geometric effect is dominant in the energy gap due to the appearance of strain in the self-equilibrium state. The multi-scale model is performed based on the molecular dynamics approach and finite element method for the micro- (atomistic) and macro-scale levels, respectively. The Cauchy-Born (CB) hypothesis is used to relate the atomic positions to the continuum field through the deformation gradient. Finally, the... 

The elastic behavior of an edge dislocation placed in the shell of a free-standing core-shell nanowire is considered within the theory of surface/interface elasticity. Using the method of complex potential functions the expressions for the stress field of the dislocation, image forces on the dislocation, and the dislocation strain energy are derived and studied in detail. A special attention is paid to non-classical effects revealed within the surface/interface elasticity approach where a characteristic length parameter referred to as surface/interface modulus is introduced. These effects are (i) the stress oscillations along the shell surface and core-shell interface for negative values of... 

Nanowire arrays of copper oxide were first grown vertically using simple and cost effective thermal oxidation method on a copper foil. Subsequently, in order to deposit and grow PbS nanocyrstalline thin films on CuO NWs by utilizing the chemical bath deposition technique, these arrays were immersed as the substrate in the reaction solution consisting of Pb(NO3)2, (NH2)2CS and NaOH. The final products were characterized in detail by which the formation of uniform, unique arrays of CuO@PbS core–shell NWs was confirmed. Due to the nature of methods employed in synthesis of this hetero structure, the tuning of core and shell size and consequently properties of the novel structure is easily... 

Fabrication of well-defined gold nanowires (GNWs) is of significant importance in many fields such as sensing applications. In this study, the electrodeposition of well-defined GNWs inside polycarbonate (PC) template has been discussed in detail. GNWs were potentiostatically electrodeposited at different filling rates. The growth of GNWs at different stages of pore filling was monitored by electrochemical measurements and field-emission scanning electron microscopy (FE-SEM). It was confirmed that under growth rates between 2.5 and 4 nm/s, GNWs with smooth ends grew uniformly inside the template without any imperfections or corrugations. The length of GNWs was electrochemically controlled to... 

The stress field of a screw dislocation inside an embedded nanowire is considered within the theory of strain-gradient elasticity. It is shown that the stress singularity is removed and all stress components are continuous and smooth across the interface, in contrast with the results obtained within the classical theory of elasticity. The maximum magnitude of dislocation stress depends greatly on the dislocation position, the nanowire size, and the ratios of shear moduli and gradient coefficients of the matrix and nanowire materials. © 2009 Acta Materialia Inc  

The phenomena of surface, interface, and size effects are the determinative factors in the prediction of the mechanical behavior of multiphase nanowires. The interatomic bond lengths and charge density distribution associated with the surface and interface layers of the relaxed configuration of such nanostructures, in the absence of any external loadings, differ from those of the bulk remarkably. Second strain gradient theory due to its competency in capturing the above mentioned effects will be employed to examine the relaxation of carbon-coated silicon nanowire, carbon nanoshell, and silicon nanowire. Using this theory their effective Young's modulus will also be estimated. To this end,... 

Platinum nanowires (PtNWs) were electrodeposited on the polycarbonate templates (PCTs) in aqueous solution of H2PtCl6 in triply distilled water. Nanowires with diameters of 50 and 100 nanometers were electrodeposited on the same condition. The kinetics of electrodeposition process was studied by electrochemical techniques such as voltammetry and chronoamperometry methods. Increasing the scan rate, the peaks shifted to more negative potentials and the current density also increased in each peak which was typical for a diffusion-control process. The potential range for the deposition of platinum nanowires was specified and consequently the potentiostatic i-t transients were utilized to produce... 

The Co nanowires were electrodeposited in polycarbonate membrane (PCT). SEM, TEM and XPS techniques were used to characterize the morphology, structure and size of nanowires as well as chemical composition. The influence of different mediums was studied on the optical absorption of dispersed cobalt nanowires. The absorption spectrum of cobalt nanowires in water showed a broad shoulder at 290 nm, but in ethanol solution it was not observed in the visible region of the spectra up to 200 nm. Cobalt nanowires dispersed in methanol presented a peak at 236 nm. We attribute the data to oxidation of cobalt in water and low dielectric constant of methanol relative to ethanol and water. We found... 

A solution-processed, bottom-up nanowire network electrode is developed and employed in a bulk heterojunction colloidal quantum dot solar cell. The electrode features a ZnO template which is converted into locally connected, infi ltratable TiO2 nanowires. The new electrode allows the application of a thicker light absorbing fi lm without compromising the charge extraction, as reported by Edward H. Sargent, Ghassan Jabbour, and co-workers on page 1769. The frontispiece shows schematically the electrode shape and the resultant device architecture  

The band gap offset is an effect of coordination numbers (CNs) of atom reduction at the edge of transversal cross-section of Silicon nanowires (SiNWs). In this paper, a hierarchical multi-scale technique is developed to model the edge effect on the band gap shift of SiNWs since the geometric effect is dominant in the energy gap due to the appearance of strain in the self-equilibrium state. The multi-scale model is performed based on the molecular dynamics approach and finite element method for the micro- (atomistic) and macro-scale levels, respectively. The Cauchy–Born (CB) hypothesis is used to relate the atomic positions to the continuum field through the deformation gradient. Finally, the... 

We report the results of our numerical investigation on the temperature dependence of the characteristics of the cylindrical gate-all-around Si nanowire field effect transistor (Si-NW-FET). Assuming the effect of temperature on the energy band structure of Si just like the effect of strain, we simulate the transistor characteristics at various temperatures (50 K ≤ T ≤ 300 K). In this investigation, we demonstrate the temperature dependence of the transistor sub-threshold swing and the threshold voltage are both linear functions of the temperature, represented by 61.5 × (T/300) + 63.4 (mV/decade) and 220140 × (T/300-1) (mV). By calculating the IDS - T characteristics for VDS = 0.4 V and...