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    Fabrication of Superstrate Copper Indium Sulfide Solar Cell Avoiding Titanium Dioxide Blocking Layer

    , M.Sc. Thesis Sharif University of Technology Safi Samghabadi, Farnaz (Author) ; Taghavinia, Nima (Supervisor)
    Abstract
    During recent years, thin-film solar cells based on chalcogenide light absorbers with CuInxGa1-xS(Se)2 compound have attracted considerable attraction due to their desirable band gaps and demonstrated high power conversion efficiencies. These solar cells are fabricated under two categories named as ‘substrate’ and ‘superstrate’, generally. The best reported energy conversion efficiency belongs to substrate type (sodalime glass/Mo/absorber layer/buffer layer/window layer) CIGS solar cells, most have been fabricated with vacuum processes. In spite of this, superstrate solar cells (transparent conducting oxide/blocking layer/buffer layer/absorber layer/back contact) provide easier and cheaper... 

    Electrochemical determination of CdS band edges and semiconducting parameters

    , Article Bulletin of the Chemical Society of Japan ; Volume 88, Issue 6 , February , 2015 , Pages 814-820 ; 00092673 (ISSN) Miandari, S ; Jafarian, M ; Mahjani, M. G ; Gobal, F ; Heidaripour, A ; Sharif University of Technology
    Chemical Society of Japan  2015
    Abstract
    Cadmium sulfide (CdS) thin film was electrodeposited on indium tin oxide (ITO) by chronoamperometry. The SEM images showed that hexagonal sheets of CdS deposited on the ITO surface. The X-ray diffraction (XRD) analysis confirmed this structure for CdS crystals and the average of crystalline size and the lattice constant parameters are approximately 39.54 and a = 0.4136, c = 0.6696 nm respectively. Photo-electrochemical investigations were performed by cyclic voltammetry (CV), linear sweep voltammetry (LSV), and electrochemical impedance spectroscopy (EIS) techniques. CdS band edges and density of states (DOS) were determined by CV technique. The band gap energy (Ebg) was measured... 

    Study on spray-pyrolyzed In2S3 thin films, targeted as electron transport layer in solar energy

    , Article Journal of Photonics for Energy ; Volume 10, Issue 2 , 2020 Hashemi, M ; Heidariramsheh, M ; Ghorashi, S. M. B ; Taghavinia, N ; Mahdavi, S. M ; Sharif University of Technology
    SPIE  2020
    Abstract
    Efficient electron transport layers (ETLs) play a pivotal role in the performance of solar cells. In recent years, Indium sulfide (In2S3) has been studied as a promising ETL in CuInGaS(e)2, Cu2ZnSnS(e)4, and perovskite solar cells. Despite several studies on spray-deposited In2S3, there is no complete experimental investigation on In2S3 thin films. The effect of the molar ratio of S/In and the type of indium precursor on the structural, morphological, optical, and electrical properties of sprayed-In2S3 layers has been studied. Films were characterized using x-ray diffraction, scanning electron microscopy (SEM), optical transmission (UV-Vis), Mott-Schottky analysis, four-point probe, and... 

    A novel low-temperature growth of uniform CuInS2 thin films and their application in selenization/sulfurization-free CuInS2 solar cells

    , Article Materials Today Communications ; Volume 26 , 2021 ; 23524928 (ISSN) Dehghani, M ; Parvazian, E ; Alamgir Tehrani, N ; Taghavinia, N ; Samadpour, M ; Sharif University of Technology
    Elsevier Ltd  2021
    Abstract
    In terms of manufacturability, there is a high tendency to deposit light-absorbing CuInS2 films by solution processing methods like ink-based depositions. In particular, for nanoparticle inks, the synthesis of highly dispersed and stable inks, with uniformity in the deposition process, is a serious challenge. Here, we demonstrate a novel two-step low-temperature CuInS2 film deposition method in which the In2S3 is deposited first. It then partially is converted into CuInS2 through the infiltration of Cu+ ions in the In2S3 layer in a dip-coating process. The resulting films are highly uniform, with diffraction peaks indicating the formation of pure CuInS2 phase. The proper stoichiometry of... 

    Electrical and optical characterization of sprayed In2S3 thin films as an electron transporting layer in high efficient perovskite solar cells

    , Article Solar Energy ; Volume 215 , 2021 , Pages 356-366 ; 0038092X (ISSN) Hashemi, M ; Minbashi, M ; Ghorashi, S. M. B ; Ghobadi, A ; Ehsani, M. H ; Heidariramsheh, M ; Hajjiah, A ; Sharif University of Technology
    Elsevier Ltd  2021
    Abstract
    This study represents the investigation of In2S3 thin films, which have been deposited with different Indium salts (Chloride, Acetate, and Nitrate) using the Chemical Spray Pyrolysis (CSP) method. The Mott-Schottky analysis has been used in case of studying the electrical properties of films such as conduction and valence band, carrier densities, Fermi level (Efn), flat band potential, and semiconductor type. In the next step, the Rb1MAFA perovskite solar cell has been simulated, and the results have been validated by the experimental data (with the least parameters for fitting). Finally, In2S3 layers have been inserted on the SnO2 layer to decrease the recombination rate and enhance the... 

    Surfactant-free stable SnS2 nanoparticles dispersion for deposition of device-quality films

    , Article Thin Solid Films ; Volume 669 , 2019 , Pages 269-274 ; 00406090 (ISSN) Haghighi, M ; Tajabadi, F ; Mahdavi, S. M ; Mohammadpour, R ; Taghavinia, N ; Sharif University of Technology
    Elsevier B.V  2019
    Abstract
    Tin sulfide (SnS2) has recently attracted considerable attention due to its layered structure that may form two dimensional morphologies. It is an n-type semiconductor with band gap and electron affinity similar to CdS and In2S3; therefore can be regarded as an alternative for these materials in thin film solar cells. Here, we synthesis of SnS2 nanoparticles with different morphology in different ratio of water-ethanol mixed solution by solvothermal method, and observe that more ethanol leads to large sheet like morphologies, while water based synthesis results in very small nanosheets. A challenge in wet deposition of device-quality thin films of SnS2 is the requirement for highly dispersed...