Sharif Digital Repository

The morphological characteristics and electronic structure of the BaTiO 3 films grown by pulsed-laser deposition technique have been investigated. AFM and FE-SEM images reveal columnar growth characteristic of these films. Utilizing spectrophotometer, optical band gap of the films were reckoned to be about 3.76 eV. Both dα/dE and PL vs. E plots reveal numerous luminance states in the gap. Despite the presence of many luminance faults in the gap, cations manage to preserve their electronic states  

In this paper, a silicon-on-insulator (SOI) p-n-p-n tunneling field-effect transistor (TFET) with a silicon doped hafnium oxide (Si:HfO2) ferroelectric gate stack is proposed and investigated via 2D device simulation with a calibrated nonlocal band-to-band tunneling model. Utilization of Si:HfO2 instead of conventional perovskite ferroelectrics such as lead zirconium titanate (PbZrTiO3) and strontium bismuth tantalate (SrBi2Ta2O9) provides compatibility to the CMOS process as well as improved device scalability. By using Si:HfO2 ferroelectric gate stack, the applied gate voltage is effectively amplified that causes increased electric field at the tunneling junction and reduced tunneling... 

This study investigated the effect of gilsonite and Styrene-Butadiene-Styrene (SBS) as asphalt binder modifiers on the physical and rheological properties of asphalt binders. For this, binder tests such as penetration test, softening point, rotational viscosity (RV), Dynamic Shear Rheometer (DSR), and Bending Beam Rheometer (BBR) were conducted on the neat and modified binders. The effect of gilsonite and SBS on the binder temperature susceptibility was also investigated by measuring Penetration Index (PI), Activation Energy (AE) and Viscosity-Temperature Susceptibility (VTS) of all the study binders. Fourier-Transform Infrared Spectroscopy (FTIR) test was directed toward investigation of... 

We have investigated the piezoelectric response of the hydrogenated graphene oxide (H-G-SiO2) stacks both experimentally and theoretically. The piezoresponse force microscopy method and density-functional theory (DFT) calculations were used to study the piezoresponse effect of this structure from both experimental and computational point of views. A mono-layer graphene, made by chemical vapour deposition method, is deposited on Si/SiO2 substrate and its surface is then functionalized with hydrogen atoms. The vertical piezoresponse, observed by piezoresponse force microscopy, is measured to be about 2146 pC N-1, that is comparable to the reported state of the art piezoelectric materials such... 

Perovskite solar cells have been appearing as a superior photovoltaic device owing to their high photovoltaic performance and low cost of fabrication. The formation of a compact and uniform perovskite layer with large crystal size is a significant factor to get the best device performance. In this work, polyvinylidene difluoride (PVDF) was used as a ferroelectric polymer additive to fabricate high-performance mesoporous CH3NH3PbI3-xClx mixed-halide perovskite solar cells in a sequential deposition method. Power conversion efficiency has been enhanced from 10.4 to 16.51% in an ambient atmosphere in the presence of an optimized amount of PVDF assuring continuous and smooth layers with large... 

Barium strontium titanate (BST, Ba1-xSrxTiO3) thin films have been extensively used in many dielectric devices such as dynamic random access memories (DRAMs). To optimize its characteristics, a microstructural control is essential. In this paper, Ba0.6Sr0.4TiO3 thin film has been deposited on the SiO2/Si substrate by the pulsed laser deposition (PLD) technique at three different oxygen working pressures of 100, 220 and 350 mTorr. Then the deposited thin films at 100 mTorr oxygen pressure were annealed for 50 min in oxygen ambient at three different temperatures: 650, 720 and 800°C. The effect of oxygen working pressure during laser ablation and thermal treatment on the films was investigated...